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STGB30H65DFB2

絲印：G30H65DFB2；Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a D2PAK package

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=30A ?Veryfastandsoftrecoveryco-packageddiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?We

STGB30H65DFB2

Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package; ? Maximum junction temperature : TJ = 175 °C \n? Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A \n? Very fast and soft recovery co-packaged diode \n? Minimized tail current \n? Tight parameter distribution \n? Low thermal resistance \n? Positive VCE(sat) temperature coefficient;

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.\n\n

STGWA30H65DFB2

Trenchgatefield-stop,650V,30A,high-speedHB2seriesIGBTinaTO-247longleadspackage

Features ?Maximumjunctiontemperature:TJ=175°C ?LowVCE(sat)=1.65V(typ.)@IC=30A ?Veryfastandsoftrecoveryco-packageddiode ?Minimizedtailcurrent ?Tightparameterdistribution ?Lowthermalresistance ?PositiveVCE(sat)temperaturecoefficient Applications ?We