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MTB33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTB33N10E

TMOSPOWERFET33AMPERES100VOLTS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE-FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain-to-sourcediodewithafas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHP33N10

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

PHP33N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=57mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    FQB33N10L

  • 制造商：

    FAIRCHILD

  • 制造商全稱：

    Fairchild Semiconductor

  • 功能描述：

    100V LOGIC N-Channel MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
25+
SOT263
154750
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
FAIRCHILD
24+
TO-263(D2PAK)
8866
詢價(jià)
F
24+
TO263
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
FAIRCHI
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
FAIRCHILD
1822+
TO-263(D
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
FAIRCHIL
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
 詢價(jià)
FAIRCHI
21+
TO-263
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
FAIRCHILD
18+
TO-263(D
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
FAIRCHILD
20+
TO-263
38900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價(jià)
更多FQB33N10L供應(yīng)商 更新時(shí)間2025-7-18 17:33:00

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