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MTB33N10E

TMOS POWER FET 33 AMPERES 100 VOLTS

TMOSE-FET?HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB33N10E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTB33N10E

N??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTB33N10ET4

N??hannel Power MOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP33N10

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP33N10E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MTP33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTW33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE-FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain-to-sourcediodewithafas

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

PHP33N10

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

詳細參數(shù)

  • 型號：

    MTB33N10E

  • 制造商：

    ON Semiconductor

  • 功能描述：

    Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK Rail

供應商型號品牌批號封裝庫存備注價格
ON/安森美
24+
4500
只做原廠渠道 可追溯貨源
 詢價
ON
24+
N/A
3000
詢價
ON
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應。
 詢價
ON
23+
TO-263
6893
詢價
ON
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
MOT
24+
TO263
5000
只做原裝公司現(xiàn)貨
 詢價
ON
23+
TO-263
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
MOT
25+23+
TO263
76071
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
ON
24+
TO-263
90000
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理
 詢價
ON
20+
1562
全新現(xiàn)貨熱賣中歡迎查詢
 詢價
更多MTB33N10E供應商 更新時間2025-7-24 13:40:00

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