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首頁>FNB81560T3>規(guī)格書詳情

FNB81560T3數(shù)據(jù)手冊分立半導(dǎo)體產(chǎn)品的功率驅(qū)動器模塊規(guī)格書PDF

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廠商型號

FNB81560T3

參數(shù)屬性

FNB81560T3 封裝/外殼為25-PowerDIP 模塊(0.815",20.70mm);包裝為管件;類別為分立半導(dǎo)體產(chǎn)品的功率驅(qū)動器模塊;產(chǎn)品描述:MODULE SPM 600V 15A 25PWRDIP

功能描述

智能功率模塊,600V,15A
MODULE SPM 600V 15A 25PWRDIP

封裝外殼

25-PowerDIP 模塊(0.815",20.70mm)

制造商

ONSEMI ON Semiconductor

中文名稱

安森美半導(dǎo)體 安森美半導(dǎo)體公司

數(shù)據(jù)手冊

原廠下載下載地址下載地址二

更新時間

2025-8-9 23:01:00

人工找貨

FNB81560T3價格和庫存,歡迎聯(lián)系客服免費人工找貨

FNB81560T3規(guī)格書詳情

描述 Description

FNB81560T3 is a Motion SPM 8 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs tominimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, inter-lock function, over-current shutdown, thermal monitoring of drive IC, and fault reporting. Thebuilt-in, high-speed HVIC requires only a single supply voltage and translates the incoming logic-level gate inputs to the high-voltage, high-current drive signals required to properly drive the module's robust shortcircuit-rated IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms.

特性 Features

? UL Certified No. E209204 (UL1557)
? 600V - 15A 3-Phase IGBT Inverter Control IC for Gate Drive and Protections
? Low-Loss, Short-Circuit Rated IGBTs
? Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing
? Active-high interface, works with 3.3 / 5 V Logic, Schmitt-trigger Input
? HVIC for Gate Driving, Under-Voltage and Short-Circuit Current Protection
? Fault Output for Under-Voltage and Short-Circuit Current Protection
? Inter-Lock Function to Prevent Short-Circuit
? Shut-Down Input
? HVIC Temperature-Sensing Built-In for Temperature Monitoring
? Isolation Rating: 1500 Vrms / min

簡介

FNB81560T3屬于分立半導(dǎo)體產(chǎn)品的功率驅(qū)動器模塊。由制造生產(chǎn)的FNB81560T3功率驅(qū)動器模塊功率驅(qū)動器模塊為電源組件(通常為半橋或單相、兩相或三相配置的 IGBT 和 MOSFET)提供物理防護。功率半導(dǎo)體或裸片將焊接或燒結(jié)在基材上,后者可承載功率半導(dǎo)體并在需要時提供電和熱觸點以及電絕緣。功率模塊提供更高的功率密度,并且在許多情況下更可靠且更易于冷卻。

技術(shù)參數(shù)

更多
  • 制造商編號

    :FNB81560T3

  • 生產(chǎn)廠家

    :ONSEMI

  • Pb-free

    :Pb

  • Halide free

    :H

  • Status

    :Active

  • Family

    :SPM? 8 Series

  • Type

    :Inverter

  • Substrate

    :Full Package

  • Input Logic

    :Active High

  • Rated Voltage Min (V)

    :600

  • IO @ 25 °C Min (A)

    :15

  • VCE(sat) @ 25 °C Typ (V)

    :1.6

  • Emitter Configuration

    :3 emitter pins

  • Shutdown Pin

    :Yes

  • Mounting Type

    :DIP

  • Package Type

    :DIP-025

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
onsemi(安森美)
24+
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1033
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5000
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2508+
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18+ROHS
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2418+
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22+
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