描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

特性 Features

? High Surge Current Capacity
? Avalanche Rated 55 mJ
? Max Junction Temperature 175 °C
? Positive Temperature Coefficient
? Ease of Paralleling
? No Reverse Recovery / No Forward Recovery

應用 Application

? PFC
? Industrial Power
? UPS
? Solar
? Welding

簡介

FFSH10120ADN-F155屬于分立半導體產(chǎn)品的二極管-整流器-陣列。由制造生產(chǎn)的FFSH10120ADN-F155二極管 - 整流器 - 陣列二極管和整流器陣列系列中的產(chǎn)品可在單個封裝內(nèi)包含兩個或多個分立二極管。其特征表述類似于單個分立二極管，并增加了“二極管配置”屬性，該屬性指示設備中二極管之間任何內(nèi)部連接的存在情況和特性。請注意，具有全橋配置的陣列被專門排除在外，并列為單獨的產(chǎn)品系列。