描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

特性 Features

? Max Junction Temperature 175 °C
? High Surge Current Capacity
? Positive Temperature Coefficient
? No Reverse Recovery / No Forward Recovery

應用 Application

? PFC
? Industrial Power
? Solar
? EV Charger
? UPS
? Welding

簡介

FFSD1065A屬于分立半導體產品的二極管-整流器-單。由制造生產的FFSD1065A二極管 - 整流器 - 單單整流器二極管系列產品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產品系列中，每個器件封裝中包含多個二極管的產品也是如此。