描述 Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

特性 Features

? High Junction Temperature
? Tj = 175C
? High UIS, Surge Current, and Avalanche
? 94mJ @ 25°C
? Low Vf
? No Qrr

應用 Application

? PFC
? Solar Inverter
? UPS
? Servers
? Buck-Boost Inverters

簡介

FFSD2065B屬于分立半導體產(chǎn)品的二極管-整流器-單。由制造生產(chǎn)的FFSD2065B二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實現(xiàn)該功能的一個實例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。