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FFSD2065B

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK; ? High Junction Temperature\n? Tj = 175C\n? High UIS, Surge Current, and Avalanche\n? 94mJ @ 25°C\n? Low Vf\n? No Qrr\n;

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

FFSD2065B

Package：DPAK3；Silicon Carbide Schottky Diode 650 V, 20 A

SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide

FFSD2065B

Marking：FFSD2065B；Package：DPAK3；Silicon Carbide Schottky Diode 650 V, 20 A

FFSD2065B

Package：TO-252-3，DPak（2 引線 + 接片），SC-63；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：SILICON CARBIDE SCHOTTKY DIODE 6

FFSD2065B_V01

Silicon Carbide Schottky Diode 650 V, 20 A

SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide

FFSH2065A

SiliconCarbideSchottkyDiode

FFSH2065BDN

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-247-3L

Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil

FFSM2065B

SiliconCarbideSchottkyDiode

FFSP2065A

SiliconCarbideSchottkyDiode650V,20A

FFSP2065B

SiliconCarbide(SiC)SchottkyDiode–EliteSiC,20A,650V,D2,TO-220-2L

Features ?MaxJunctionTemperature175°C ?AvalancheRated94mJ ?HighSurgeCurrentCapacity ?PositiveTemperatureCoefficient ?EaseofParalleling ?NoReverseRecovery/NoForwardRecovery ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant Applications ?