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NTTFD021N08C

Marking：D021；Package：WQFN12；MOSFET - Single N-Channel 80 V, 21 m, 24 A

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

DGD0211CWT-7

Marking：D0211C；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features -EfficientLowCostSolutionforDrivingMOSFETsandIGBTs -WideSupplyVoltageOperatingRange:4.5Vto18V -1.9ASource/1.8ASinkOutputCurrentCapability -Non-InvertingandInvertingInputConfiguration -FastPropagationDelay(35nsTyp) -FastRiseandFallTimes(15nsT

DIODESDiodes Incorporated

美臺半導(dǎo)體

DGD0211CWTQ-7

Marking：D0211C；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features -EfficientLow-CostSolutionforDrivingMOSFETsandIGBTs -WideSupplyVoltageOperatingRange:4.5Vto18V -1.9ASource/1.8ASinkOutputCurrentCapability -Non-InvertingandInvertingInputConfiguration -FastPropagationDelay(35nsTyp) -FastRiseandFallTimes(15nsT

DIODESDiodes Incorporated

美臺半導(dǎo)體

DGD0215WT-7

Marking：D0215；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs WideSupplyVoltageOperatingRange:4.5Vto18V 1.9ASource/1.8ASinkOutputCurrentCapability InvertingandNon-InvertingInputConfigurations FastPropagationDelay(35nstyp) FastRiseandFallTimes(15nstyp) Logic

DIODESDiodes Incorporated

美臺半導(dǎo)體

DGD0216WT-7

Marking：D0216；Package：TSOT25；1.9A HIGH SPEED SINGLE GATE DRIVER

Features EfficientLowCostSolutionforDrivingMOSFETsandIGBTs WideSupplyVoltageOperatingRange:4.5Vto18V 1.9ASource/1.8ASinkOutputCurrentCapability InvertingandNon-InvertingInputConfigurations FastPropagationDelay(35nstyp) FastRiseandFallTimes(15nstyp) Logic

DIODESDiodes Incorporated

美臺半導(dǎo)體

IDH02G120C5

Marking：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features: ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/Noforwardrecovery ?Temperatureindependentswitchingbehavior ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK02G120C5

Marking：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/noforwardrecovery ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應(yīng)商型號品牌批號封裝庫存備注價格
Honeywell
2020+
N/A
8
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
Honeywell
22+
NA
8
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
17
24+
TO-220-2
377
原裝現(xiàn)貨假一賠十
 詢價
FUJITSU/富士通
23+
TO-3P
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
17
23+
TO-220-2
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
17
23+
TO-220-2
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
DURATOOL
24+
con
115
優(yōu)勢庫存,原裝正品
 詢價
MARKI
2023+
10
詢價
SAGAMI
24+
16000
全新原裝數(shù)量均有多電話咨詢
 詢價
更多D021供應(yīng)商 更新時間2025-7-26 10:19:00

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