| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Marking：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode Features: ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/Noforwardrecovery ?Temperatureindependentswitchingbehavior ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/noforwardrecovery ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ? | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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