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IDH02G120C5

Marking：D0212C5；Package：PG-TO220-2-1；Silicon Carbide Schottky Diode

Features: ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/Noforwardrecovery ?Temperatureindependentswitchingbehavior ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK02G120C5

Marking：D0212C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode

Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Noreverserecoverycurrent/noforwardrecovery ?Temperatureindependentswitchingbehaviour ?Lowforwardvoltageevenathighoperatingtemperature ?Tightforwardvoltagedistribution ?Excellentthermalperformance ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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