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首頁>CY7C1313BV18-200BZC>規(guī)格書詳情

CY7C1313BV18-200BZC集成電路(IC)的存儲器規(guī)格書PDF中文資料

CY7C1313BV18-200BZC
廠商型號

CY7C1313BV18-200BZC

參數屬性

CY7C1313BV18-200BZC 封裝/外殼為165-LBGA;包裝為卷帶(TR);類別為集成電路(IC)的存儲器;產品描述:IC SRAM 18MBIT PARALLEL 165FBGA

功能描述

18-Mbit QDR-II SRAM 4-Word Burst Architecture

封裝外殼

165-LBGA

文件大小

259.029 Kbytes

頁面數量

23

生產廠商

CYPRESS CypressSemiconductor

中文名稱

賽普拉斯 賽普拉斯半導體公司

網址

網址

數據手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-9 15:13:00

人工找貨

CY7C1313BV18-200BZC價格和庫存,歡迎聯(lián)系客服免費人工找貨

CY7C1313BV18-200BZC規(guī)格書詳情

Functional Description

The CY7C1311BV18, CY7C1911BV18, CY7C1313BV18, and CY7C1315BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR?-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write port has dedicated Data Inputs to support Write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices.

特性 Features

? Separate Independent Read and Write data ports

— Supports concurrent transactions

? 300-MHz clock for high bandwidth

? 4-Word Burst for reducing address bus frequency

? Double Data Rate (DDR) interfaces on both Read and Write ports (data transferred at 600 MHz) at 300 MHz

? Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

? Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches

? Echo clocks (CQ and CQ) simplify data capture in high-speed systems

? Single multiplexed address input bus latches address inputs for both Read and Write ports

? Separate Port Selects for depth expansion

? Synchronous internally self-timed writes

? Available in x 8, x 9, x 18, and x 36 configurations

? Full data coherency providing most current data

? Core VDD = 1.8 (±0.1V); I/O VDDQ = 1.4V to VDD

? Available in 165-ball FBGA package (13 x 15 x 1.4 mm)

? Offered in both lead-free and non-lead free packages

? Variable drive HSTL output buffers

? JTAG 1149.1 compatible test access port

? Delay Lock Loop (DLL) for accurate data placement

產品屬性

  • 產品編號:

    CY7C1313BV18-200BZC

  • 制造商:

    Cypress Semiconductor Corp

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    卷帶(TR)

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術:

    SRAM - 同步,QDR II

  • 存儲容量:

    18Mb(1M x 18)

  • 存儲器接口:

    并聯(lián)

  • 電壓 - 供電:

    1.7V ~ 1.9V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    165-LBGA

  • 供應商器件封裝:

    165-FBGA(13x15)

  • 描述:

    IC SRAM 18MBIT PARALLEL 165FBGA

供應商 型號 品牌 批號 封裝 庫存 備注 價格
CY
25+
BGA
4500
全新原裝、誠信經營、公司現貨銷售!
詢價
CYPRESS
22+
BGA
8000
原裝正品支持實單
詢價
CY
23+
QFP
65600
詢價
CYPRESS
23+
BGA
7000
詢價
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
專注配單,只做原裝進口現貨
詢價
Cypress Semiconductor Corp
23+
165-FBGA13x15
7300
專注配單,只做原裝進口現貨
詢價
CYPRESS/賽普拉斯
25+
BGA
20
原裝正品,假一罰十!
詢價
Cypress
22+
165FBGA (13x15)
9000
原廠渠道,現貨配單
詢價
CYPRESS/賽普拉斯
22+
BGA
20000
原裝現貨,實單支持
詢價
CYPRESS/賽普拉斯
2023+
BGA
4433
原廠全新正品旗艦店優(yōu)勢現貨
詢價