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CY7C1313AV18中文資料賽普拉斯數(shù)據(jù)手冊(cè)PDF規(guī)格書

廠商型號(hào) |
CY7C1313AV18 |
功能描述 | 18-Mb QDRTM-II SRAM 4-Word Burst Architecture |
文件大小 |
327.27 Kbytes |
頁(yè)面數(shù)量 |
22 頁(yè) |
生產(chǎn)廠商 | CYPRESS CypressSemiconductor |
中文名稱 | 賽普拉斯 賽普拉斯半導(dǎo)體公司 |
網(wǎng)址 | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-8-9 23:01:00 |
人工找貨 | CY7C1313AV18價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
CY7C1313AV18規(guī)格書詳情
Functional Description
The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1311AV18) or 18-bit words (CY7C1313AV18) or 36-bit words (CY7C1315AV18) that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with Port Selects for each port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.
特性 Features
? Separate Independent Read and Write Data Ports
— Supports concurrent transactions
? 250-MHz Clock for High Bandwidth
? 4-Word Burst for reducing address bus frequency
? Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz
? Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
? Two output clocks (C and C) accounts for clock skew and flight time mismatching
? Echo clocks (CQ and CQ) simplify data capture in high speed systems
? Single multiplexed address input bus latches address inputs for both Read and Write ports
? Separate Port Selects for depth expansion
? Synchronous internally self-timed writes
? Available in ×8, ×18, and ×36 configurations
? Full data coherancy providing most current data
? Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)
? 13 × 15 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball (11 × 15 matrix)
? Variable drive HSTL output buffers
? JTAG 1149.1 Compatible test access port
? Delay Lock Loop (DLL) for accurate data placement
產(chǎn)品屬性
- 型號(hào):
CY7C1313AV18
- 制造商:
Rochester Electronics LLC
- 功能描述:
1MX18 1.8V QDR-II SRAM(4-WORD BURST) - Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
CYPRESS/賽普拉斯 |
24+ |
NA/ |
3662 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) | ||
CYPRESS(賽普拉斯) |
24+ |
LBGA165 |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價(jià) | ||
CYPRESS |
2016+ |
BGA |
3000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價(jià) | ||
CYPRESS/賽普拉斯 |
0613+ |
BGA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
CIRRUS |
22+ |
BGA |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||
CIRRUS |
25+ |
BGA |
54658 |
百分百原裝現(xiàn)貨 實(shí)單必成 |
詢價(jià) | ||
CYPRESS/賽普拉斯 |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
詢價(jià) | |||
CYPRESS |
0601+ |
BGA |
1222 |
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詢價(jià) | ||
CYPRESS |
23+ |
BGA |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
CY |
23+ |
BGA |
65600 |
詢價(jià) |