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首頁>CY7C1313AV18-200BZC>規(guī)格書詳情

CY7C1313AV18-200BZC中文資料賽普拉斯數(shù)據(jù)手冊PDF規(guī)格書

CY7C1313AV18-200BZC
廠商型號

CY7C1313AV18-200BZC

功能描述

18-Mb QDRTM-II SRAM 4-Word Burst Architecture

文件大小

327.27 Kbytes

頁面數(shù)量

22

生產(chǎn)廠商

CYPRESS CypressSemiconductor

中文名稱

賽普拉斯 賽普拉斯半導體公司

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-9 18:09:00

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CY7C1313AV18-200BZC規(guī)格書詳情

Functional Description

The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1311AV18) or 18-bit words (CY7C1313AV18) or 36-bit words (CY7C1315AV18) that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”.

Depth expansion is accomplished with Port Selects for each port. Port selects allow each port to operate independently.

All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

特性 Features

? Separate Independent Read and Write Data Ports

— Supports concurrent transactions

? 250-MHz Clock for High Bandwidth

? 4-Word Burst for reducing address bus frequency

? Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz

? Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

? Two output clocks (C and C) accounts for clock skew and flight time mismatching

? Echo clocks (CQ and CQ) simplify data capture in high speed systems

? Single multiplexed address input bus latches address inputs for both Read and Write ports

? Separate Port Selects for depth expansion

? Synchronous internally self-timed writes

? Available in ×8, ×18, and ×36 configurations

? Full data coherancy providing most current data

? Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)

? 13 × 15 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball (11 × 15 matrix)

? Variable drive HSTL output buffers

? JTAG 1149.1 Compatible test access port

? Delay Lock Loop (DLL) for accurate data placement

產(chǎn)品屬性

  • 型號:

    CY7C1313AV18-200BZC

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    1MX18 1.8V QDR-II SRAM(4-WORD BURST) - Bulk

供應商 型號 品牌 批號 封裝 庫存 備注 價格
CYPRESS
2016+
BGA
3000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
詢價
CYPRESS/賽普拉斯
25+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
詢價
CYPRESS
0601+
BGA
1222
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
CYPRESS
23+
BGA
7300
專注配單,只做原裝進口現(xiàn)貨
詢價
CY
23+
BGA
65600
詢價
CYPRESS/賽普拉斯
0613+
BGA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
CYPRESS
22+
BGA165
8000
原裝正品支持實單
詢價
CY
25+
BGA
4500
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
詢價
CYPRESS
24+
BGA
2
詢價
CYPRESS
FBGA165
2197
正品原裝--自家現(xiàn)貨-實單可談
詢價