描述 Description

The CMPA601C025 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25- μm gate-length fabrication process. GaN on SiC has superior properties compared to silicon; gallium arsenide or GaN on Si; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si; GaAs; and GaN on Si transistors. This MMIC contains a reactively matched amplifier design approach enabling very wide bandwidths to be achieved.

特性 Features

·40 W Typical PSAT
·Operation up to 28 V
·High Breakdown Voltage

應用 Application

·Broadband Amplifiers
·Radar Amplifiers
·Test Equipment Amplifiers
·Jamming Amplifiers