描述 Description

The CMP5585030 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage; reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC is available as a die and in a 10 lead metal/ceramic flanged package for optimal electrical and thermal performance.

特性 Features

·Up to 50 W Typical PSAT
·Operation up to 28 V
·High Breakdown Voltage
·High Temperature Operation

應用 Application

·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms