描述 Description

The CMPA2560025 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier; enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.

特性 Features

·24 dB Small Signal Gain
·25 W Typical PSAT
·Operation up to 28 V
·High Breakdown Voltage
·High Temperature Operation

應用 Application

·Test Instrumentation
·Fiber Drivers
·EMC Amplifier Drivers
·Ultra Broadband Amplifiers