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ESD08V52D-LCF

Marking：CL8；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 100~234WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Oline(Bidirectional) Workingvoltages:3.3~24V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3~15V IEC61000-4-2(ESD)±15kV(air),±8kV(contact):

ESD08V52DS-LCF

Marking：CL8；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 100~234WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsonebidirectionalI/Oline WorkingVoltages:3.3V~24V Lowclampingvoltage Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V~15V IEC61000-4-

MMSZ4V7ET1G

Marking：CL8；Package：SOD-123；Zener Voltage Regulators 500 mW SOD-123 Surface Mount

ThreecompleteseriesofZenerdiodesareofferedintheconvenient, surfacemountplasticSOD?123package.Thesedevicesprovidea convenientalternativetotheleadless34?packagestyle. SpecificationFeatures ?500mWRatingonFR?4orFR?5Board ?WideZenerReverseVoltageRange?2.4

ULC08CTN

Marking：CL8；Package：DFN1610TN；ULTRA LOW CAPACITANCE TVS DIODE ARRAY

74CBTLV3861DGVRG4.B

Marking：CL861；Package：TVSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH

5-ΩSwitchConnectionBetweenTwoPorts Rail-to-RailSwitchingonDataI/OPorts IoffSupportsPartial-Power-DownMode Operation Flow-ThroughArchitectureOptimizesPCB Layout Latch-UpPerformanceExceeds100mAPer JESD78,ClassII description/orderinginformation TheSN74CBTLV3861pr

SN74CBTLV3857DBQR

Marking：CL857；Package：QSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS

EnableSignalIsSSTL_2Compatible Flow-ThroughArchitectureOptimizesPCB Layout DesignedforUseWith200Mbit/sDouble Data-Rate(DDR)SDRAMApplications SwitchOn-StateResistanceIsDesignedto EliminateSeriesResistortoDDRSDRAM Internal10-kΩPulldownResistorsto GroundonBPor

SN74CBTLV3857DGVR

Marking：CL857；Package：TVSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS

EnableSignalIsSSTL_2Compatible Flow-ThroughArchitectureOptimizesPCB Layout DesignedforUseWith200Mbit/sDouble Data-Rate(DDR)SDRAMApplications SwitchOn-StateResistanceIsDesignedto EliminateSeriesResistortoDDRSDRAM Internal10-kΩPulldownResistorsto GroundonBPor

SN74CBTLV3857PWR

Marking：CL857；Package：TSSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS

EnableSignalIsSSTL_2Compatible Flow-ThroughArchitectureOptimizesPCB Layout DesignedforUseWith200Mbit/sDouble Data-Rate(DDR)SDRAMApplications SwitchOn-StateResistanceIsDesignedto EliminateSeriesResistortoDDRSDRAM Internal10-kΩPulldownResistorsto GroundonBPor

SN74CBTLV3861DGVR

Marking：CL861；Package：TVSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH

5-ΩSwitchConnectionBetweenTwoPorts Rail-to-RailSwitchingonDataI/OPorts IoffSupportsPartial-Power-DownMode Operation Flow-ThroughArchitectureOptimizesPCB Layout Latch-UpPerformanceExceeds100mAPer JESD78,ClassII description/orderinginformation TheSN74CBTLV3861pr

SN74CBTLV3861DGVR

Marking：CL861；Package：TVSOP；LOW-VOLTAGE 10-BIT FET BUS SWITCH

*5-?SwitchConnectionBetweenTwoPorts *Rail-to-RailSwitchingonDataI/OPorts *IoffSupportsPartial-Power-DownMode Operation *Flow-ThroughArchitectureOptimizesPCB Layout *Latch-UpPerformanceExceeds100mAPer JESD78,ClassII