SN74CBTLV3857DBQR屬于集成電路（IC）的信號開關(guān)多路復用器解碼器。由美國德州儀器公司制造生產(chǎn)的SN74CBTLV3857DBQR信號開關(guān)，多路復用器，解碼器邏輯型信號開關(guān)、多路復用器和編碼器 IC 可用于對以數(shù)字格式表示數(shù)據(jù)的電信號進行路由和選擇。這些器件與設(shè)計用于模擬信號的類似產(chǎn)品有所不同，它們保留的信息表示為兩個電狀態(tài)之一，而不是兩個外部界限內(nèi)的無窮變化量。

Enable Signal Is SSTL_2 Compatible

Flow-Through Architecture Optimizes PCB

Layout

Designed for Use With 200 Mbit/s Double

Data-Rate (DDR) SDRAM Applications

Switch On-State Resistance Is Designed to

Eliminate Series Resistor to DDR SDRAM

Internal 10-kΩ Pulldown Resistors to

Ground on B Port

Internal 50-kΩ Pullup Resistor on

Output-Enable Input

Rail-to-Rail Switching on Data I/O Ports

Ioff Supports Partial-Power-Down Mode

Operation

Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

description/ordering information

This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE) input

levels.

When OE is low, the 10-bit bus switch is on, and port A is connected to port B. When OE is high, the switch is

open, and the high-impedance state exists between the two ports. There are 10-kΩ pulldown resistors to ground

on the B port.

The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2

data path.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that

damaging current will not backflow through the device when it is powered down. The device has isolation during

power off.