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CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED12N10L

N-Channel 100 V (D-S) MOSFET

FEATURES ?DT-TrenchPowerMOSFET ?175°CJunctionTemperature ?100RgTested APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CED12N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED12N10L

N Channel MOSFET;

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12N10

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=180mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12N10

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=180mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU12N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■100V,11A,RDS(ON)=175mΩ@VGS=10V. RDS(ON)=185mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU12N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,11A,RDS(ON)=175mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=185mW@VGS=5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

技術參數(shù)

  • BVDSS(V)：

    100

  • Rds(on)mΩ@10V：

    175

  • Rds(on)mΩ@5V：

    185

  • ID(A)：

    11

  • Qg(nC)@10V(typ)：

    12

  • RθJC(℃/W)：

    3.5

  • Pd(W)：

    43

  • Configuration：

    Single

  • Polarity：

    N

供應商型號品牌批號封裝庫存備注價格
CET/華瑞
25+
TO-252
33877
CET/華瑞全新特價CED12N10L即刻詢購立享優(yōu)惠#長期有貨
 詢價
CET/華瑞
25+
TO-251
156629
明嘉萊只做原裝正品現(xiàn)貨
 詢價
CET/華瑞
24+
TO-252
499547
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
VBsemi
23+
TO-251
8560
受權代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
VBsemi(臺灣微碧)
2447
TO-251
105000
80個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價
VBSEMI/臺灣微碧
23+
TO251
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CET/華瑞
2022+
TO-252
24075
原廠代理 終端免費提供樣品
 詢價
C
23+
TO-251
6000
原裝正品，支持實單
 詢價
CET
20+
TO-252
100
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
VBsemi/臺灣微碧
23+
TO-251
28000
原裝正品
 詢價
更多CED12N10L供應商 更新時間2025-7-28 14:14:00

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