描述 Description

Alpha’s image rejection balanced GaAs Schottky diode mixer has a typical conversion loss of 9 dB at an LO power level as low as 8 dBm over the band 33–43 GHz. An external 90° IF hybrid is required to combine the IF1 and IF2 signals at the desired IF frequency. The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. This device is recommended for applications requiring down conversion.

特性 Features

■ Low Conversion Loss, 9 dB

■ Low LO Power Requirement, 8 dBm

■ Image Rejection, 18 dB

■ No DC Bias Required

■ Requires External IF 90° Hybrid