描述 Description

Alpha’s ring hybrid GaAs Schottky diode mixer has a typical conversion loss of 6.0 dB at an LO power level as low as 9 dBm over the band 32–37 GHz. The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance.

特性 Features

■ Low Conversion Loss, 6.0 dB

■ Low LO Power Requirement, 9 dBm

■ High LO to RF Isolation, 28 dB

■ No DC Bias Required