描述 Description

Alpha’s double balanced GaAs Schottky diode mixer has a typical conversion loss of 6.5 dB at an LO power level as low as 11 dBm over the band 26–33 GHz. The chip uses Alpha’s proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance.

特性 Features

■ Low Conversion Loss, 6.5 dB

■ Insensitive to LO Power Variations

■ High LO to RF Isolation, 27 dB

■ No DC Bias Required