描述 Description

AFGY160T65SPD-B4 is a 650 V 160 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

特性 Features

? Vcesat and Vth binning
? Better current sharing during paralleling operation
? AEC-Q101 Qualified and PPAP Capable
? Positive Temperature Co-Efficient
? 100% of the Parts are Dynamically Tested
? Short circuit ruggedness > 6us @ 25°C
? This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
? Copacked with Soft, Fast Recovery Extremefast Diode

應用 Application

? EV traction inverter
? Electrical Vehicles

簡介

AFGY160T65SPD-B4屬于分立半導體產品的晶體管-UGBT、MOSFET-單。由制造生產的AFGY160T65SPD-B4晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導體器件，能夠處理大電流，具有快速開關特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關能量和柵極電荷。