描述 Description

AFGY120T65SPD-B4 is a 650 V 120 A IGBT based on trench field stop 3 technology. This product is binned based on Vcesat and Vth i.e. thetop side marking on each individual unit defines the range of Vcesat and Vth the particular device has. This allows customers to assemble units in parallel that have very close parameter distribution. This enables better current sharing in application.

特性 Features

? Vcesat and Vth Binning
? allows better current sharing and thermal management in application
? Automotive Qualified
? Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A
? Maximum Junction Temperature: TJ = 175°C
? Positive Temperature Co-efficient
? Tight Parameter Distribution
? High Input Impedance
? 100% of the Parts are Dynamically Tested
? Short circuit ruggedness > 6μs @ 25 oC
? Copacked with Soft, Fast Recovery Extremefast Diode
? This Device is Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

應(yīng)用 Application

? EV tractionmotor inverter
? Electric vehicles
? Hybrid Electric vehicles

簡(jiǎn)介

AFGY120T65SPD-B4屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的AFGY120T65SPD-B4晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。