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PBSS4032SP

Marking:4032SP;Package:SO8;30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor

Generaldescription PNP/PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT96-1(SO8)mediumpowerSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Lowcollector-emittersaturationvoltageVCEsat ■Optimizedswitchingtime ■Highcollectorcurrentcapab

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安世安世半導(dǎo)體(中國(guó))有限公司

PBSS4032SPN

Marking:4032SPN;Package:SO8;30 V NPN/PNP low VCEsat (BISS) transistor

Featuresandbenefits *Lowcollector-emittersaturationvoltageVCEsat *Optimizedswitchingtime *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areat

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

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