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110N

型號：ISL91110IINZ-T；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

110N

型號：ISL91110IINZ-T7A；Package：25BallWLCSP；High Efficiency Buck-Boost Regulator with 4.5A Switches

110N15SC

型號：BSC110N15NS5SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 150 V

Features ?Dual-sidecooledpackagewithlowestJunction-topthermalresistance ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?Idealforhigh-frequencyswitchi

110N20LF

型號：IPB110N20N3LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features ?Idealforhot-swapande-fuseapplications ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC6

110N12N6

型號：ISC110N12NM6；Package：PG-TDSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

110N100

型號：RM110N100BT2；Package：TO-220；N-Channel Trench MOSFET

Features Advancedtrenchcelldesign LowThermalResistance VDSS≥100VRDS(ON)≦4.1mΩ@VGS=10V

110N150

型號：RM110N150T2；Package：TO-220-3L；N-Channel Super Trench Power MOSFET

Description TheRM110N150T2usesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpower lossesareminimizedduetoanextremelylowcombinationof RDS(ON)andQg.Thisdeviceisidealforhigh

110N82

型號：RM110N82T2；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM110N82T2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=82V,ID=110A RDS(ON)

110N90

型號：RM110N90DF；Package：DFN5x6；N-Channel Trench MOSFET

Features HighEfficiency LowDenseCellDesign VDSS≥90V RDS(ON)≦4.7mΩ@VGS=10V improveddv/dtcapability ReliableandRugged Application Halogen-free Networking,LoadSwtich LEDlighting,QuickCharger

110N7F6

型號：STH110N7F6-2；Package：H2PAK-2；N-channel 68 V, 0.0053 Ω typ.,110 A, STripFET? F6 Power MOSFET in a H2PAK-2 package

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET?F6technology withanewtrenchgatestructure.Th