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1110

型號：PESD5V0L1ULD；Package：SOD882D；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina SOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithv

1110

型號：PESD5V0L1ULD-Q；Package：DFN1006D-2；Low capacitance unidirectional ESD protection diode

1.Generaldescription LowcapacitanceunidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina SOD882DleadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithv

1110IB

型號：HFA1110IB；Package：8LdSOIC；750MHz, Low Distortion Unity Gain, Closed Loop Buffer

TheHFA1110isaunitygainclosedloopbufferthatachieves-3dBbandwidthof750MHz,whileofferingexcellentvideoperformanceandlowdistortion.ManufacturedonIntersil’sproprietarycomplementarybipolarUHF-1process,theHFA1110alsooffersveryfastslewrate,andhighoutputcurrent.It

1110IBZ

型號：HFA1110IBZ；Package：8LdSOIC；750MHz, Low Distortion Unity Gain, Closed Loop Buffer

TheHFA1110isaunitygainclosedloopbufferthatachieves-3dBbandwidthof750MHz,whileofferingexcellentvideoperformanceandlowdistortion.ManufacturedonIntersil’sproprietarycomplementarybipolarUHF-1process,theHFA1110alsooffersveryfastslewrate,andhighoutputcurrent.It

111011

型號：PDTA114YQA；Package：SOT1215；50 V, 100 mA PNP resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

111001

型號：PDTC114YQA；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Generaldescription 100mANPNResistor-EquippedTransistor(RET)familyinaleadlessultrasmallDFN1010D-3(SOT1215)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderablesidepads. Featuresandbenefits ■100mAoutputcurrentcapability ■Reducedpickandplacecosts

111001

型號：PDTC114YQA；Package：SOT1215；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits ?100mAoutputcurrentcapability ?Built-inbiasresistors ?Simplifiescircuitdesign ?Reducescomponentcount ?Reducedpickandplacecosts ?Lowpackageheightof0.37mm ?AEC-Q101qualified ?SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

111000

型號：PMDXB1200UPE；Package：DFN1010B-6；30 V, dual P-channel Trench MOSFET

11100000

型號：PMEG2020EPK；Package：DFN1608D-2；20 V, 2 A low VF MEGA Schottky barrier rectifier