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IPB110N20N3LF

Marking：110N20LF；Package：PG-TO263-3；OptiMOSTM 3 Linear FET, 200 V

Features ?Idealforhot-swapande-fuseapplications ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Halogen-freeaccordingtoIEC6

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N20N3LF

Marking：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPB110N20N3LF

Combining a low RDS(on) with a wide safe operating area (SOA); ? Combination of low R DS(on) and wide safe operating area (SOA)\n? High max. pulse current\n? High continuous pulse current\n\n優(yōu)勢:\n? Rugged linear mode operation\n? Low conduction losses\n? Higher in-rush current enabled for faster start-up and shorter down time\n;

OptiMOS? Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.\n

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI110N20N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPI110N20N3G

OptiMOSTM3Power-TransistorFeaturesExcellentgatechargexRDS(on)product(FOM)

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDECfortargetapplication ?Halogen-freeaccordingtoIEC6124

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI110N20N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI110N20N3G

OptiMOSTM3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N20N3

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP110N20N3G

OptiMOSTM3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP110N20N3G

OptiMOS3Power-Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

技術(shù)參數(shù)

  • OPN：

    IPB110N20N3LFATMA1

  • Qualification：

    Non-Automotive

  • Package name：

    PG-TO263-3

  • VDS max：

    200 V

  • RDS (on) @10V max：

    11 m?

  • ID @25°C max：

    88 A

  • QG typ @10V：

    76 nC

  • Special Features：

    Wide SOA

  • Polarity：

    N

  • Operating Temperature min：

    -55 °C

  • Operating Temperature max：

    150 °C

  • Technology：

    OptiMOS? 3 LF

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
N/A
12000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Infineon(英飛凌)
24+
TO-263
8498
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
INFINEON
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
INFINE0N
21+
D2PAK (TO-263)
32568
100%進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
Infineon(英飛凌)
2447
PG-TO263-3
115000
1000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
 詢價
Infineon/英飛凌
2021+
PG-TO263-3
9600
原裝現(xiàn)貨，歡迎詢價
 詢價
Infineon/英飛凌
24+
PG-TO263-3
25000
原裝正品,假一賠十!
 詢價
Infineon/英飛凌
24+
PG-TO263-3
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
Infineon/英飛凌
21+
PG-TO263-3
6820
只做原裝,質(zhì)量保證
 詢價
Infineon/英飛凌
23+
PG-TO263-3
10000
原裝正品，支持實單
 詢價
更多IPB110N20N3LF供應(yīng)商 更新時間2025-7-28 11:10:00

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