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XR100N20T

N-Ch 200V Fast Switching MOSFETs;

XNRUSEMIShenzhen Xinrui Semiconductor Technology Co. , Ltd.

新銳半導(dǎo)體深圳市新銳半導(dǎo)體科技有限公司

HM100N20T

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

IXFN100N20

HiPerFETPowerMOSFETs

N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●U

IXYS

IXYS Corporation

IXFN100N20

N-ChannelMOSFET

DESCRIPTION ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage -VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverter ·BatteryChargers ·SynchronousRectification

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

LMPC100N20

N-ChannelSuperTrenchPowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

RCD100N20

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)High-speedswitching. 3)WiderangeofSOA. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

RCD100N20TL

N-Channel200V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?PWMOptimized ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?PrimarySideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

RDN100N20

Switching(200V,10A)

Switching(200V,10A) Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)Exellentresistancetodamagefromstaticelectricity. Application Switching

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

STE100N20

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE ■HIGHCURRENTPOWERMODULE ■AVALANCHERUGGEDTECHNOLOGY(SEESTH33N20FIFORRATING) ■VERYLARGESOA-LARGEPEAKPOWERCAPABILITY ■EASYTOMOUNT ■SAMECURRENTCAPABILITYFORTHETWOSOURCETERMINALS ■EXTREMELYLOWRth

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package Type：

    TO220-AB

  • Configuration：

    Single

  • MOSFET Type：

    N

  • VDS(V)：

    200

  • VGS(V)：

    ±20

  • Vth typ.(V)：

    3

  • RDS(ON) (mΩ) typ. at VGS=10V：

    20

  • ID (A)：

    100A

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更多XR100N20T供應(yīng)商 更新時間2025-7-27 14:01:00

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