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XR100P04F

XR-P-MOSFETS;

XNRUSEMIShenzhen Xinrui Semiconductor Technology Co. , Ltd.

新銳半導(dǎo)體深圳市新銳半導(dǎo)體科技有限公司

G100P04KA

P-ChannelEnhancementModePowerMOSFET

Description TheG100P04KAusesadvancedtrenchtechnologytoprovid eexcellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G100P04KH

P-ChannelEnhancementModePowerMOSFET

Description TheG100P04KHusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

NP100P04PDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P04PDG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP100P04PLG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100P04PLG

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=?10V,ID=?50A) RDS(on)2=5.1mΩMAX.(VGS=?4.5V,ID=?50A) ?Highcurrentrating:ID(D

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

PJD100P04

40VP-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@-10V,ID@-20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

PJD100P04-AU

40VP-ChannelEnhancementModeMosfet

Features ?RDS(ON),VGS@-10V,ID@-20A

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

YFW100P04AD

-40VP-CHANNELENHANCEMENTMODEMOSFET

Application Batteryprotection Loadswitch Uninterruptiblepowersupply

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

技術(shù)參數(shù)

  • Package Type：

    PDFN5*6

  • Configuration：

    Single

  • MOSFET Type：

    P

  • VDS(V)：

    -40

  • VGS(V)：

    ±20

  • Vth typ.(V)：

    1.7

  • RDS(ON) (mΩ) typ. at VGS=10V：

    3.1

  • RDS(ON) (mΩ) typ. at VGS=4.5V：

    4.4

  • ID (A)：

    100

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更多XR100P04F供應(yīng)商 更新時(shí)間2025-7-27 13:52:00

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