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NP100N04MDH

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04MUH

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04MUH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP100N04NDH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP100N04NDH

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04NUH

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04NUH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP100N04NUJ

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP100N04NUJ

MOSFIELDEFFECTTRANSISTOR

Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) ?LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) ?Highcurrentrating:ID

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP100N04NUJ

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

技術(shù)參數(shù)

  • Package Type：

    PDFN5*6

  • Configuration：

    Single

  • MOSFET Type：

    N

  • VDS(V)：

    40

  • VGS(V)：

    ±20

  • Vth typ.(V)：

    1.5

  • RDS(ON) (mΩ) typ. at VGS=10V：

    3.8

  • RDS(ON) (mΩ) typ. at VGS=4.5V：

    5.7

  • ID (A)：

    100

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更多XR100N04F供應(yīng)商 更新時間2025-7-27 14:01:00

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