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UPD16803

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION TheμPD16803isamonolithicdualHbridgedrivercircuitwhichusesN-channelpowerMOSFETsinitsdriverstage.ByemployingthepowerMOSFETsfortheoutputstage,thisdrivercircuithasasubstantiallyimprovedsaturationvoltageandpowerconsumptionascomparedwithconvent

UPD16803

MOS INTEGRATED CIRCUIT

FEATURES ?LowONresistance(sumofONresistorsoftopandbottomtransistors) RON1=1.5WTYP.(VM=5.0V) RON2=2.0WTYP.(VM=12.0V) ?Lowcurrentconsumption:IDD=0.4mATYP. ?StopmodefunctionthatturnsOFFalloutputtransistors ?Compactsurfacemountpackage:20-pinplas

UPD16803

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT;

UPD16803GS

Intelligent Power Devices-Protected and Intelligent Power Switches; ? Low ON resistance (sum of ON resistors of top and bottom transistors)\n?? RON1 = 1.5 ? TYP. (VM = 5.0 V)\n?? RON2 = 2.0 ? TYP. (VM = 12.0 V)\n? Low current consumption: IDD = 0.4 mA TYP.\n? Stop mode function that turns OFF all output transistors\n? Compact surface mount package: 20-pin plastic SOP (300 mil)?;

DESCRIPTION\nThe μPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors.\nIn addition, the drive current can be adjusted by an external resistor in a power-saving mode.\nThe μPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD.FEATURES\n? Low ON resistance (sum of ON resistors of top and bottom transistors)\n?? RON1 = 1.5 ? TYP. (VM = 5.0 V)\n?? RON2 = 2.0 ? TYP. (VM = 12.0 V)\n? Low current consumption: IDD = 0.4 mA TYP.\n? Stop mode function that turns OFF all output transistors\n? Compact surface mount package: 20-pin plastic SOP (300 mil)

UPD16803GS

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION TheμPD16803isamonolithicdualHbridgedrivercircuitwhichusesN-channelpowerMOSFETsinitsdriverstage.ByemployingthepowerMOSFETsfortheoutputstage,thisdrivercircuithasasubstantiallyimprovedsaturationvoltageandpowerconsumptionascomparedwithconvent

UPD16803GS

MOS INTEGRATED CIRCUIT

FEATURES ?LowONresistance(sumofONresistorsoftopandbottomtransistors) RON1=1.5WTYP.(VM=5.0V) RON2=2.0WTYP.(VM=12.0V) ?Lowcurrentconsumption:IDD=0.4mATYP. ?StopmodefunctionthatturnsOFFalloutputtransistors ?Compactsurfacemountpackage:20-pinplas