描述 Description

Qorvo's UJ4SC075018L8S is a 750 V, 18 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

特性 Features

? On-resistance RDS(on): 18 mohm (typ)
? Operating temperature: 175°C (max)
? Excellent reverse recovery: Qrr = 128nC
? Low body diode VFSD: 1.14V
? Low gate charge: QG = 37.8nC
? Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive
? Low intrinsic capacitance
? ESD protected, HBM class 2
? MO-229 package for faster switching, clean gate waveforms

應(yīng)用 Application

? Solid State Relays and Circuit-Breakers
? Line Rectification and Active-Bridge Rectification Circuits in AC/DC Front-Ends
? EV Charging
? PV Inverters
? Switched-Mode Power Supplies
? Power Factor Correction Modules
? Motor Drives
? Induction Heating