描述 Description

The UJ4SC075010L8S is a 750V, 10.7 mohm G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.

特性 Features

? FOn Resistance RDS(on): 10.7 mohm (typ)
? Operating temperature: 175C (max)
? Excellent reverse recovery: Qrr = 274nC
? Low body diode VFSD: 1.1V
? Low gate charge: QG = 75nC
? Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive
? Low intrinsic capacitance
? ESD Protected: HBM Class 2
? MO-229 package for faster switching, clean gate waveforms

應(yīng)用 Application

? Server and Telecom power supplies
? Switch mode power supplies
? DC-DC converter circuits
? EV Charging
? PV Inverters