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UJ4C075033K3S

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 33 mohm, 750V,?TO-247-3L;

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads

UJ4C075033K3S

750 V, 33 mohm SiC FET; ? On-resistance (RDS(on)): 33 mohm (typ)\n? Maximum operating temperature: 175 °C\n? Excellent reverse recovery: Qrr = 71 nC\n? Low body diode VFSD: 1.26 V\n? Low gate charge: QG = 37.8 nC\n? Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive\n;

Qorvo's UJ4C075033K3S is a 750 V, 33 mohm Gen 4 SiC FET. It is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the TO-247-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.\n

UJ4C075033K3S

絲?。?strong>UJ4C075033K3S；Package：TO-247-3L；750V-33mW SiC FET