最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

UF640

18 A, 200 V, 0.18 OHM, ?N-CHANNEL POWER MOSFET

These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640 suitable for resonant and PWM converter topologies.; ? RDS(ON) =0.18?@VGS = 10V. \n? Ultra Low gate charge (typical 43nC) \n? Low reverse transfer capacitance (CRSS = typical 100 pF) \n? Fast switching capability \n? Avalanche energy specified \n? Improved dv/dt capability, high ruggedness;

UF640

18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UF640

18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UF640-Q

18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance,and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The? UF640-Q suitable for resonant and PWM converter topologies.; RDS(ON) < 0.2? @ VGS=10V, ID=10AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;

UF640_11

18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

UF640_15

N-CHANNEL POWER MOSFET

UF640G-AA3-R

N-CHANNEL POWER MOSFET

UF640G-T2Q-R

N-CHANNEL POWER MOSFET

UF640G-T2Q-T

N-CHANNEL POWER MOSFET

UF640G-TA3-T

18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET