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TRS10E65H

絲?。?a target="_blank" title="Marking" href="/s10e65h/marking.html">S10E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications ?PowerFactorCorrection ?SolarInverters ?UninterruptiblePowerSupplies ?DC-DCConverters Features (1)Chipdesignof3rdgeneration (2)Lowforwardvoltage:VF=1.2V(typ.) (3)Lowtotalcapacitivecharge:Qc=27nC(typ.) (4)Lowreversecurrent:IR=2.0μA(typ.

TRS10E65H

SiC Schottky barrier diode;

Application Scope：Power factor correction / Solar inverters / Uninterruptible power supplies / DC-DC converters\n\nFeature：Chip design of 3rd generation\n\nNumber of Circuits：1\n\nInternal Connection：Single\n\nRoHS Compatible Product(s) (#)：Available\n\n

TRS10E65C

SiCSchottkyBarrierDiode

TRS10E65F

SiCSchottkyBarrierDiode