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首頁>TP65H035WSQA>規(guī)格書詳情
TP65H035WSQA數(shù)據(jù)手冊Transphorm中文資料規(guī)格書

廠商型號 |
TP65H035WSQA |
功能描述 | 650V 35mΩ AEC-Q101 Qualified GaN FET in?TO-247 |
制造商 | Transphorm Transphorm |
數(shù)據(jù)手冊 | |
更新時(shí)間 | 2025-8-15 17:11:00 |
人工找貨 | TP65H035WSQA價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
TP65H035WSQA規(guī)格書詳情
描述 Description
The?TP65H035WSQA?650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
The device is also?automotive qualified?to 175°C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035WSQA is offered in an industry-standard 3 lead TO-247 with a common source package configuration.
技術(shù)參數(shù)
- 制造商編號
:TP65H035WSQA
- 生產(chǎn)廠家
:Transphorm
- Rds(on)eff (mΩ) typ
:35
- Rds(on)eff (mΩ) max
:41
- Id (25°C) (A) max
:47
- Package
:TO-247
- Package Variation
:Source
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
NS |
24+ |
DIP-16 |
37500 |
原裝正品現(xiàn)貨,價(jià)格有優(yōu)勢! |
詢價(jià) | ||
HARRIS |
25+ |
SOP |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價(jià) | ||
TOPRO |
23+ |
QFP208 |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) | ||
HARRIS |
1998 |
SOP |
472 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
TOPRO |
22+ |
QFP |
5000 |
原裝現(xiàn)貨庫存.價(jià)格優(yōu)勢 |
詢價(jià) | ||
HARRIS |
24+ |
SOP |
2500 |
自己現(xiàn)貨 |
詢價(jià) | ||
TPPRO |
23+ |
QFP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
2023+ |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||||
TOPRO |
16+ |
QFP |
1052 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) | ||
TP |
2025+ |
SOP-20 |
3685 |
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售 |
詢價(jià) |