描述 Description

The TP65H035WS 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H035WS is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

特性 Features

? 易于驅(qū)動 – 與標(biāo)準(zhǔn)柵極驅(qū)動器兼容
? 低傳導(dǎo)、低開關(guān)損耗
? 低 Qrr (170nC) – 無需任何續(xù)流二極管
? GSD 引腳布局可提升高速設(shè)計(jì)
? 通過 JEDEC 認(rèn)證的 氮化鎵GaN技術(shù)
? 符合限制有害物質(zhì)指令 (RoHS) 規(guī)范要求且不含鹵素
? 實(shí)現(xiàn)更高效的拓?fù)?– 易于實(shí)施無橋圖騰柱設(shè)計(jì)
? 快速切換，提高效率
? 提高功率密度
? 系統(tǒng)尺寸減小、重量減輕
? BOM 成本更低

應(yīng)用 Application

? Datacom
? Broad industrial
? PV inverter
? Servo motor