Product Description

RFMD’s SZM-3166Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 802.16 customer premises equipment (CPE) terminals in the 3.3GHz to 3.6GHz bands. It can run from a 3V to 5.2V supply. The external output match and bias adjustability allows load line optimization for other applications covering 3.5GHz to 3.8GHz. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte tin finish, designated by the ‘Z’ suffix.

特性 Features

■ P1dB=35dBm at 5.2V

■ Three Stages of Gain:35dB

■ 802.11g 54Mb/s Class AB Performance

■ POUT=27dBm at 2.5 EVM, VCC 5.2V, 900mA

■ Active Bias with Adjustable Current

■ On-Chip Output Power Detector

■ Low Thermal Resistance

■ Power Up/Down Control <1?s

■ Attenuator Step 20dB at VPC2=0V

■ Class 1C ESD Rating

Applications

■ 802.16 WiMAX Driver or Output Stage

■ Fixed Wireless, WLL

■ CPE Terminal Applications