Product Description

RFMD’s SZM-2066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.16 and 802.11b/g equipment in the 2.4GHz to 2.7GHz bands. It can run from a 3V to 5V supply. The external output match and bias adjustability allows load line optimization for other applications or over narrower bands. It features an output power detector, on/off power control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by switching the second stage Power up/down control.

特性 Features

■ P1dB= 33.5dBm at 5V

■ Three Stages of Gain:37dB

■ 802.11g 54Mb/s Class AB Performance

■ POUT=26dBm at 2.5 EVM, VCC 5V, 690mA

■ Active Bias with Adjustable Current

■ On-Chip Output Power Detector

■ Low Thermal Resistance

■ Power Up/Down Control <1μs

■ Attenuator Step 20dB at VPC2=0V

Applications

■ 802.16 WiMAX Driver or Output Stage

■ 802.11b/g WiFi, WiFi