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SVF4N90F

Marking：SVF4N90F；Package：TO-220F-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

SVF4N90F

Marking：SVF4N90F；Package：TO-220F-3L；4A, 900V N-CHANNEL MOSFET

GENERALDESCRIPTION SVF4N90F/MJ/T/DisanN-channelenhancementmodepower MOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMhigh-voltageplanarVDMOStechnology.The improvedprocessandcellstructurehavebeenespeciallytailored tominimizeon-stateresistance

SILANSilan Microelectronics Joint-stock

士蘭微杭州士蘭微電子股份有限公司

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