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STW34N65M5

N-channel 650 V, 0.09 Ohm typ., 28 A MDmesh M5 Power MOSFET in TO-247 package; ? Worldwide best RDS(on) * area\n? Higher VDSSrating and high dv/dt capability? Excellent switching performance\n? 100% avalanche tested;

These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.\n \n

STW34N65M5

Marking：34N65M5；Package：TO-247；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STW34N65M5

isc N-Channel MOSFET Transistor

STB34N65M5

iscN-ChannelMOSFETTransistor

STB34N65M5

N-channel650V,0.09typ.,28AMDmeshVPowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STF34N65M5

N-channel650V,0.09typ.,28AMDmeshVPowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STF34N65M5

N-channel650V,0.09Ωtyp.,28AMDmesh?VPowerMOSFETsinTO-220FP,I2PAKFP,I2PAKpackages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STFI34N65M5

N-channel650V,0.09Ωtyp.,28AMDmesh?VPowerMOSFETsinTO-220FP,I2PAKFP,I2PAKpackages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve

STI34N65M5

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=28A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=110mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Switchingapp

STI34N65M5

N-channel650V,0.09typ.,28AMDmeshVPowerMOSFETsinD2PAK,I2PAK,TO-220andTO-247packages

Features ?WorldwidebestRDS(on)*area ?HigherVDSSratingandhighdv/dtcapability ?Excellentswitchingperformance ?100avalanchetested Applications ?Switchingapplications Description ThesedevicesareN-channelMDmesh?V PowerMOSFETsbasedonaninnovative proprietaryve