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STP33N60DM6

N-channel 600 V, 115 m typ., 25 A, MDmesh? DM6 Power MOSFET in a TO?220 package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected ?High-creepagepackage Description Thishigh-voltageN-channelPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

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STP33N60DM6

N溝道600 V、115 mOhm典型值、25 A MDmesh DM6功率MOSFET，TO-220封裝; ? Fast-recovery body diode \n? Lower RDS(on) per area vs previous generation \n? Low gate charge, input capacitance and resistance \n? 100% avalanche tested \n? Extremely high dv/dt ruggedness \n? Zener-protected;

This high-voltage N-channel Power MOSFET is part of the MDmesh? DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.\n\n

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STB33N60DM6

N-channel600V,115mΩtyp.,25A,MDmeshDM6PowerMOSFETinaD2PAKpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Applications ?Switchingapplications Description Thishigh-voltageN-cha

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF33N60DM6

N-channel600V,115mtyp.,25A,MDmeshDM6PowerMOSFETinaTO?220FPpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STL33N60DM6

N-channel600V,125mtyp.,21A,MDmeshDM6PowerMOSFETinaPowerFLAT8x8HVpackage

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    TO-220AB

  • Grade：

    Industrial

  • VDSS(V)：

    600

  • RDS(on)_max(@ VGS=10V)(Ω)：

    0.128

  • Drain Current (Dc)_max(A)：

    25

  • PTOT_max(W)：

    190

  • Qg_typ(nC)：

    35

  • Features：

    Fast recovery diode

  • Reverse Recovery Time_typ(ns)：

    115

  • Qrr_typ(nC)：

    520

  • Peak Reverse Current_nom(A)：

    9

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
STM
19+
1750
TO-220-3
 詢價(jià)
ST(意法半導(dǎo)體)
24+
TO-220
7828
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
ST(意法半導(dǎo)體)
2447
TO-220
105000
50個(gè)/管一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期
 詢價(jià)
ST
22+
TO-220-3
6000
十年配單,只做原裝
 詢價(jià)
ST
23+
TO-220AB
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
ST/意法
22+
TO-220-3
14100
原裝正品
 詢價(jià)
ST(意法)
24+
NA/
8735
原廠直銷,現(xiàn)貨供應(yīng),賬期支持!
 詢價(jià)
ST
22+
TO-220-3
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價(jià)
ST
1000
只做正品
 詢價(jià)
STMicroelectronics
23+
MOSFET
5864
原裝原標(biāo)原盒 給價(jià)就出 全網(wǎng)最低
 詢價(jià)
更多STP33N60DM6供應(yīng)商 更新時(shí)間2025-7-30 14:11:00

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