描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is partof the H series of IGBTs, which represents an optimum compromise between conduction andswitching losses to maximize the efficiency of high switching frequency converters.Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer parallelingoperation.

特性 Features

? High speed switching
? Tight parameter distribution
? Safe paralleling
? Low thermal resistance
? Short-circuit rated

簡介

STGWT15H60F屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGWT15H60F晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。