描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
主要特性
Maximum junction temperature: TJ = 175 °CHigh speed switching seriesMinimized tail currentLow saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 20 ATight parameter distributionPositive VCE(sat) temperature coefficientLow thermal resistanceVery fast soft recovery antiparallel diode

特性 Features

? Maximum junction temperature: TJ = 175 °C

? High speed switching series

? Minimized tail current

? Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 20 A

? Tight parameter distribution

? Positive VCE(sat) temperature coefficient

? Low thermal resistance

? Very fast soft recovery antiparallel diode

簡(jiǎn)介

STGWA20H65DFB屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGWA20H65DFB晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類(lèi)型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。