描述 Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

? Maximum junction temperature: TJ = 175 °C
? Tail-less switching off
? VCE(sat) = 1.85 V (typ.) @ IC = 60 A
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Very fast soft recovery antiparallel diode

簡介

STGW60V60DF屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGW60V60DF晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。