描述 Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

特性 Features

? Maximum junction temperature: TJ= 175 °C
? High speed switching series
? Minimized tail current
? Low saturation voltage: VCE(sat)= 1.6 V (typ.) @ IC= 40 A
? Tight parameters distribution
? Safe paralleling
? Low thermal resistance
? Low VFsoft recovery co-packaged diode
? Lead free package

簡(jiǎn)介

STGW40H60DLFB屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGW40H60DLFB晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開(kāi)關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開(kāi)關(guān)能量和柵極電荷。