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STGD4M65DF2

Marking：G4M65DF2；Package：DPAK；Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartoftheMseriesIGBTs,whichrepresentanoptimal balancebetweeninvertersystemperformanceandefficiencywherethelow-lossand theshort-circuitfunctionalityise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD4M65DF2

650 V、4 A溝槽柵場截止低損耗M系列IGBT; ? 6 μs of short-circuit withstand time \n? VCE(sat) = 1.6 V (typ.) @ IC = 4 A \n? Tight parameter distribution \n? Safer paralleling \n? Low thermal resistance \n? Soft and very fast recovery antiparallel diode;

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.\n\n

STSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD4M65DF2

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD4M65DF2_V01

Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartoftheMseriesIGBTs,whichrepresentanoptimal balancebetweeninvertersystemperformanceandefficiencywherethelow-lossand theshort-circuitfunctionalityise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

G4M65DF2

Trenchgatefield-stop,650V,4A,Mserieslow-lossIGBT

Description ThisdeviceisanIGBTdevelopedusinganadvancedproprietarytrenchgatefieldstopstructure.ThedeviceispartoftheMseriesIGBTs,whichrepresentanoptimal balancebetweeninvertersystemperformanceandefficiencywherethelow-lossand theshort-circuitfunctionalityise

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB4M65DF2

Trenchgatefield-stopIGBT,Mseries650V,4Alowloss

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGF4M65DF2

Trenchgatefield-stopIGBT,Mseries650V,4Alowloss

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

技術(shù)參數(shù)

  • Package：

    DPAK

  • Grade：

    Industrial

  • VCES_max(V)：

    650

  • PTOT_max(W)：

    68

  • Freewheeling diode：

    true

  • IC_max(@ Tc=100°C)(A)：

    4

  • IC_max(@ Tc=25°C)(A)：

    8

  • IF_max(@ Tc=100°C)(A)：

    4

  • IF_max(@ Tc=25°C)(A)：

    8

  • VCE(sat)_typ(V)：

    1.6

  • VF_typ(V)：

    1.9

  • Qg_typ(nC)：

    15.2

  • Eon_typ(mJ)：

    0.04

  • Eoff_typ(mJ)：

    0.14

  • Err_typ(μJ)：

    15

  • Qrr_typ(nC)：

    140

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
24+
TO-252
2669
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
ST/意法
25+
TO-252-3
32000
ST/意法全新特價STGD4M65DF2即刻詢購立享優(yōu)惠#長期有貨
 詢價
ST
18/20+
TO-252
20000
全新原裝公司現(xiàn)貨
詢價
ST
23+
TO-252
20000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
ST
22+
30000
原裝現(xiàn)貨,可追溯原廠渠道
 詢價
ST(意法半導(dǎo)體)
2447
TO-252-2(DPAK)
315000
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
STM
1809+
TO-252
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
ST/意法
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
ST/意法半導(dǎo)體
23+
DPAK-3
6900
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多STGD4M65DF2供應(yīng)商 更新時間2025-7-27 23:00:00

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