描述 Description

This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required.

特性 Features

? AEC-Q101 qualified
? SCIS energy of 300 mJ @ TJ = 25 °C
? Parts are 100% tested in SCIS
? ESD gate-emitter protection
? Gate-collector high voltage clamping
? Logic level gate drive
? Very low saturation voltage
? High pulsed current capability
? Gate and gate-emitter resistor

簡(jiǎn)介

STGD20N45LZAG屬于分立半導(dǎo)體產(chǎn)品的晶體管-UGBT、MOSFET-單。由制造生產(chǎn)的STGD20N45LZAG晶體管 - UGBT、MOSFET - 單單 IGBT（絕緣柵雙極晶體管）是一種具有三個(gè)端子的多層半導(dǎo)體器件，能夠處理大電流，具有快速開關(guān)特性。其特征參數(shù)包括類型、集射極擊穿電壓、集電極電流、脈沖集電極電流、VCE(ON)、開關(guān)能量和柵極電荷。